发明名称 |
Deposition control of stop layer and dielectric layer for use in the formation of local interconnects |
摘要 |
A deposition method allows for the forming of a uniform dielectric stop layer that is substantially void of defects caused by outgassing effects. The stop layer is deposited in a reactor chamber at a higher than normal temperature of at least 480 DEG C. The stop layer is then combined with an overlying dielectric layer to provide an inter-level dielectric structure through which a local interconnect can be formed to provide a conductive path to one or more regions of the underlying semiconductor devices.
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申请公布号 |
US6060393(A) |
申请公布日期 |
2000.05.09 |
申请号 |
US19970993888 |
申请日期 |
1997.12.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO, MINH VAN;CHAN, DARIN A.;FOOTE, DAVID K. |
分类号 |
H01L21/768;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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