| 摘要 |
1,132,006. Crystallization. CONSORTIUM FUR ELEKTROCHEMISCHE INDUSTRIE G.m.b.H. 10 Nov., 1965 [12 Nov., 1964], No. 47731/65. Heading BIS. A silicon-germanium melt from a charge vessel 1 having a confined bottom portion with a capillary orifice 3 is forced intermittently in drops through the orifice by means of a reciprocating plunger 6 into a shaping tube 7 of quartz, which may be shaken, rotated or subjected to ultrasonic vibration to effect homogeneous crystallization. The lower portion of the plunger and the charge vessel may be tapered and the plunger may carry stirring vanes (Fig. 2, not shown). Fig. 3 (not shown) illustrates the plunger mechanism. The melt may contain arsenic, antimony, bismuth, boron, or phosphorus as doping agent. Arsenic and phosphorus may be introduced as the trichloride, which may be bubbled through the melt. |
