发明名称 MICRO WORKING METHOD FOR WAFER
摘要 PROBLEM TO BE SOLVED: To perform micro working for wafer by using photoresist materials by subsequently exposing wafer on which the photoresist materials are laminated to an energy source, developing the photoresist materials and performing dry etching for the laminated wafer. SOLUTION: Wafer is effectively washed and subsequently a laminating processing is performed for wafer by using a normal laminating technique. Subsequently, the laminated body is exposed to an energy source and a bridging action is performed after this exposition and before development. After the laminating processing, wafer is developed, an etching processing is received and photoresist is peeled. By using dry film photoresist, etching processings can be performed for the surface of wafer two times or more numbers of times before the next process. In each etching process, different depths can be made or large different etching area can be made.
申请公布号 JP2000127100(A) 申请公布日期 2000.05.09
申请号 JP19990249847 申请日期 1999.09.03
申请人 TRW INC 发明人 EDWIN W SABIN;HARVEY N ROGERS;VLADIMIR MEDVEDEV
分类号 B81C1/00;G03F7/004;G03F7/26;H01L21/027;H01L21/302;H01L21/3065 主分类号 B81C1/00
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