Field shield isolated transistor

摘要

A field shield isolated transistor is provided wherein the left-hand edge (E1) of a left-hand contact pad (51a) is positioned a distance (d5) to the right of the left-hand edge (F1) of a left-hand field shield gate electrode (41); the right-hand edge (E2) of the left-hand contact pad (51a) is positioned a distance (d6) to the right of the right-hand edge (F2) of the left-hand field shield gate electrode (41); the left-hand edge (E3) of a right-hand contact pad (52a) is positioned a distance (d7) to the left of the left-hand edge (F3) of a right-hand field shield gate electrode (42); and the right-hand edge (E4) of the right-hand contact pad (52a) is positioned a distance (d8) to the left of the right-hand edge (F4) of the right-hand field shield gate electrode (42). The right-hand edge (E2) of the left-hand contact pad (51a) and the left-hand edge (E3) of the right-hand contact pad (52a) which are positioned closer to diffusion layers (21-23) reduce the size of the MOS transistor, achieving the effective use of the area thereof.