| 发明名称 |
Power transistor having vertical FETs and method for making same |
| 摘要 |
A power transistor having of a plurality of vertical MOSFET devices combined in parallel to achieve high-performance operation and methods of fabricating this device.
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| 申请公布号 |
US6060746(A) |
申请公布日期 |
2000.05.09 |
| 申请号 |
US19970798663 |
申请日期 |
1997.02.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERTIN, CLAUDE L.;GAMBINO, JEFFREY P.;MANDELMAN, JACK A. |
| 分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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