| 摘要 |
PROBLEM TO BE SOLVED: To synthesize a hard BN thin film having excellent characteristics as those of a coating material to be used at high temp. and further capable of applying coating on the surface of a thermaly weak material. SOLUTION: In a method in which, simultaneously with the evaporation of thermal boron(B), ions by an ion source and neutral, accelerated, active nitrogen grains (N2*) are applied toward a substrate for film formation to synthesize a boron nitride(BN) thin film on the substrate, a substrate holder 8 is provided with a refrigerant flowing passage for subjecting the substrate to forced cooling to a low temp. region lower than room temp., and, in the process of film formation, the substrate is subjected to forced cooling to hold the substrate temp. to a low temp., by which the grain growth of hexagonal crystal BN (h-BN) is suppressed and the development of the layer is suppressed to form into more amorphous BN, and, moreover, by controlling the ratio of the granular number between N2* and the evaporated B, i.e., (N2*/B), the high purity turbostratic BN (t-BN) thin film of high quality which does not contain unreacted B is synthesized.
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