| 摘要 |
A flash memory cell and a method of fabricating the same are disclosed in the present invention. A method of fabricating a flash memory cell having a substrate includes the steps of forming a buried data line in the substrate, forming an insulating layer on the substrate including the buried data line, forming an erase gate on the insulating layer, forming an isolation layer by etching the insulating layer with the erase gate as a mask, forming a floating gate having an indentation at least, the indentation of the floating gate corresponding to the erase gate, and forming a control gate on the floating gate. A flash memory cell includes a substrate, first and second buried data lines in the substrate, an isolation layer on the substrate, a floating gate including a indentation at least on the substrate between the first and second buried data lines, an erase gate over the isolation layer, a part of the erase gate being inserted into the indentation, and a control gates on the floating gate.
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