发明名称 Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device
摘要 An integrated circuit structure and method provides for an integrated circuit device to respond to an edge transition detection (ETD) pulse in one of two ways. First, in response to the ETD pulse, the integrated circuit device exits a test mode at least temporarily every cycle of the integrated circuit device. Second, a node of the integrated circuit device is re-initialized every cycle if it is not forced by a super voltage indicative of test mode entry. Both of these responses prevent accidental entry of the integrated circuit device into the test mode. If the integrated circuit device is supposed to be in the test mode, it stays in the test mode. If, however, the integrated circuit device is not intended to be in the test mode, the ETD pulse forces the integrated circuit device out of the test mode. Subsequent entry into the test mode of the device is permitted if conditions for entry into the test mode have otherwise been met.
申请公布号 US6059450(A) 申请公布日期 2000.05.09
申请号 US19960771643 申请日期 1996.12.21
申请人 STMICROELECTRONICS, INC. 发明人 MCCLURE, DAVID CHARLES
分类号 G11C7/10;G11C8/18;G11C29/46;H03K5/1534;(IPC1-7):G11C7/00 主分类号 G11C7/10
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