发明名称 PRODUCTION OF TITANIUM OXIDE THIN FILM
摘要 PROBLEM TO BE SOLVED: To form a thin film having high crystalline and high photocatalytic activity by tightly attaching a substrate to a heater element in an aq. soln. containing titanium ammonium fluoride so as to indirectly heat the substrate. SOLUTION: A chemical reaction expressed by the formula proceeds in an aq. soln. containing titanium ammonium fluoride to promote crystallization and growth of crystals of titanium oxide which forms a thin film. Thus, a thin film having high crystalline is obtd. The substrate consists of stainless steel, quartz glass, soda lime glass, zeolite or various kinds of ceramics. The heat source of the heater element may be a heat generating heater which is embedded inside and energized to directly generate heat. Or, heat may be generated by contact with another heat source. The substrate and heater element are dipped in an aq. soln. containing (NH4)2TiF6, and the reaction tank is kept at 15 to 30 deg.C in a thermostatic water tank. The temp. of the heater element is preferably controlled to be higher by about 20 to 50 deg.C than the set temp. of the thermostatic water tank.
申请公布号 JP2000128536(A) 申请公布日期 2000.05.09
申请号 JP19980298256 申请日期 1998.10.20
申请人 MATSUSHITA REFRIG CO LTD 发明人 WAKITA KATSUYA;HIROTA MASANORI
分类号 C01G23/053;B01J35/02;C23C18/04;C23C18/12;(IPC1-7):C01G23/053 主分类号 C01G23/053
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