| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process for silicon single crystal that can increase the yield of dislocation-free crystals and retain the stabilized reproducibility of dislocation free crystal formation for a long period of time, and increases the productivity of single crystal of large diameter and high weight, when a seed crystal scarcely causing dislocation is provided and the seeding is carried out together with necking or without necking (namely dislocation-free seeding) in the CZ method. SOLUTION: The silicon seed crystal to be used in the CZ method is doped with nitrogen and the concentration of the nitrogen is 5×1013-5×1015 atoms/cm3 and has an edge pointed shape or a rod shape having the flat face at its top end. When the silicon single crystal is produced, the crystal stated above is used, brought into contact with the silicon melt and molten, then necked or without necking, and allowed to grow the silicon single crystal.
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