Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers

摘要

A semiconductor device with first and second types of devices formed in a semiconductor substrate with a barrier layer formed over the surface of the semiconductor device including over the first and second types of devices with the barrier layer removed from over the first type of device. The first type of device is a positive charge sensitive device such as a nonvolatile memory device. The semiconductor device has a hydrogen getter layer formed under the barrier layer.