Borderless vias with HSQ gap filled patterned metal layers

摘要

Spin-on HSQ is employed to gap fill metal layers in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O2-containing plasma, is overcome by treating the degraded HSQ layer with an H2-containing plasma to restore the dangling Si-H bonds, thereby passivating the surface and preventing moisture absorption, before filling the via opening with conductive material, such as a barrier layer.