| 摘要 |
Organometallic compounds of the formula M(C11H19O2)x(OCH(CH3)2)y : Ln (I) M is a metal selected from Group IIA, Group IIIA, Group IVA, Group IIIB, Group IVB, Group VB or Group VIIIA; L is organic amine; n is an integer greater than 1; and x and y are integers from 0 to 4, provided that x + y is an integer from 2 to 4 and preparation thereof. Also disclosed are vapour deposition precursor compositions comprising (I) and a process for forming a high dielectric thin film comprising the steps of vapor depositing a high dielectric thin film on a substrate heated at 350 to 700 DEG C using argon, helium, hydrogen, oxygen or mixtures thereof as the carrier and reaction gas, wherein the thin film precursor is an organometallic compound of Formula I. |
