Method of manufacturing a semiconductor substrate having a dielectric isolation structure

摘要

In accordance with this invention, in manufacturing a semiconductor substrate having a dielectric isolation structure, an approach is employed to form a dielectric film at a semiconductor layer (32) formed by epitaxial growth and grooves for carrying out dielectric isolation to deposit filler (36) thereon thereafter to polish the deposited filler by using the polishing condition where the polishing rate ratio of the filler to the dielectric film is one fifth or less. Thus, an active semiconductor layer where elements are to be formed can be provided with good productivity under the state where the flatness thereof is good and the layer thickness is uniformly and precisely controlled.