| 发明名称 |
Integrated circuit and method |
| 摘要 |
Heterojunction bipolar transistors (130) with bases (138) including an etch stop element are disclosed. The preferred embodiment devices have AlxGa1-xAs emitters (140) and GaAs collectors (136) and bases (138) with InyGa1-xAs added to the bases (138) to stop chloride plasma etches.
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| 申请公布号 |
US6057567(A) |
申请公布日期 |
2000.05.02 |
| 申请号 |
US19940179238 |
申请日期 |
1994.01.10 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BAYRAKTAROGLU, BURHAN |
| 分类号 |
H01L29/73;H01L21/285;H01L21/306;H01L21/331;H01L21/335;H01L21/338;H01L29/205;H01L29/737;H01L29/778;H01L29/812;(IPC1-7):H01H85/02 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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