发明名称 Method of measuring waviness in silicon wafers
摘要 A method and system of measuring waviness of a silicon wafer. A memory stores data representative of the shape of the wafer at a plurality of positions on the wafer and a processor processes the data to determine a waviness parameter. The processor defines an inspection surface as a function of the data and calculates deviations between the inspection surface and a first reference plane at a plurality of positions on the inspection surface. The processor further defines a plurality of localized sites on the wafer and calculates deviations between the inspection surface and a second reference plane at a plurality of positions on the inspection surface for each site. The second reference plane is a function of the calculated deviations between the inspection surface for each site and the first reference plane. The processor then defines a waviness parameter for each site as a maximum variance of the calculated deviations between the inspection surface and the second reference plane.
申请公布号 US6057170(A) 申请公布日期 2000.05.02
申请号 US19990264230 申请日期 1999.03.05
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 WITTE, DALE ANDREW
分类号 H01L21/66;(IPC1-7):G01R31/26 主分类号 H01L21/66
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