发明名称 Controlled amine poisoning for reduced shrinkage of features formed in photoresist
摘要 A process for reducing shrinkage of photolithographic features formed in a photoresist including exposing the photoresist to at least one material selected from the group consisting of at least one amine, at least one amide, at least one aldehyde, and nitrogen.
申请公布号 US6057084(A) 申请公布日期 2000.05.02
申请号 US19970943623 申请日期 1997.10.03
申请人 FUSION SYSTEMS CORPORATION 发明人 MOHONDRO, ROBERT DOUGLAS
分类号 G03F7/039;G03F7/004;G03F7/40;H01L21/027;(IPC1-7):G03F7/00 主分类号 G03F7/039
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