| 摘要 |
An electron-beam data generating device generates electron-beam data for creating a mask for a layout pattern of a semiconductor integrated circuit. The device includes processing circuits operating in parallel. The electron-beam data generating device also includes a data processing unit for processing, in parallel, the layout pattern based on at least one of several design layers of the semiconductor integrated circuit, the processes used in fabricating the mask, and segments of the mask, each segment serving as an electron-beam radiation region. The parallel processing is achieved by dividing the data processing and assigning each divided portion of the data processing to respective processing circuits. A format converting unit converts data processed by the processing unit into electron-beam data and outputs the electron-beam data.
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