发明名称 |
Scalable flash EEPROM memory cell, method of manufacturing and operation thereof |
摘要 |
A scalable flash EEPROM cell has a semiconductor substrate with a drain and a source and a channel therebetween. A select gate is positioned over a portion of the channel and is insulated therefrom. A floating gate has a first edge and a second edge with a first portion over the select gate and insulated therefrom, and a second portion over a second portion of the channel and over the source, and is between the select gate and the source. A control gate is over the floating gate and is insulated therefrom and has a first edge and a second edge aligned with the first edge and the second edge of the floating gate.
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申请公布号 |
US6057575(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980110096 |
申请日期 |
1998.07.02 |
申请人 |
INTEGRATED MEMORY TECHNOLOGIES, INC. |
发明人 |
JENQ, CHING-SHI |
分类号 |
G11C16/04;H01L21/28;H01L29/423;(IPC1-7):H01L29/76 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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