发明名称 Sense/output circuit for a semiconductor memory device
摘要 A sense/output circuit is designed for use with a memory device, such as an SDRAM (Synchronized Dynamic Random-Access Memory) device, which is capable of switching off some power-consuming circuit components immediately after the requested data output is completed. This feature can help reduce the power consumption by the overall memory system, making the use of the SDRAM device more cost-effective. Moreover, the reduction of power consumption can be achieved without concerning process parameters, component parameters, and temperature variations. As a result, the delay margin can be reduced compared to the prior art, which also contribute to the reduction of power consumption.
申请公布号 US6058059(A) 申请公布日期 2000.05.02
申请号 US19990385737 申请日期 1999.08.30
申请人 UNITED MICROELECTRONICS CORP.;UNITED SILICON INCORPORATED 发明人 HUANG, SHIH-HUANG;LU, HSIN-PANG
分类号 G11C7/06;G11C7/10;(IPC1-7):G11C7/02 主分类号 G11C7/06
代理机构 代理人
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