发明名称 |
Method for etching a metal layer with dimensional control |
摘要 |
A method for etching a metal layer on a substrate with dimensional control is disclosed. First, an anti-reflection layer is formed over the metal layer. A photoresist layer is then formed over the anti-reflection layer. A metal layer pattern is defined by patterning the photoresist layer. An etching process is performed to etch the anti-reflection layer with dimensional loss compared with the metal layer pattern, by using the photoresist layer as a mask. Another etching process is performed to etch the metal layer with dimensional gain compared with the anti-reflection layer, by using the anti-reflection layer as a mask. A metal layer with nearly zero-biased dimension is achieved.
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申请公布号 |
US6057246(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980067927 |
申请日期 |
1998.04.28 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LEE, I-PING;JENG, ERIK S.;HSIEH, CHYEI-JER |
分类号 |
H01L21/027;H01L21/311;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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