发明名称 Method for etching a metal layer with dimensional control
摘要 A method for etching a metal layer on a substrate with dimensional control is disclosed. First, an anti-reflection layer is formed over the metal layer. A photoresist layer is then formed over the anti-reflection layer. A metal layer pattern is defined by patterning the photoresist layer. An etching process is performed to etch the anti-reflection layer with dimensional loss compared with the metal layer pattern, by using the photoresist layer as a mask. Another etching process is performed to etch the metal layer with dimensional gain compared with the anti-reflection layer, by using the anti-reflection layer as a mask. A metal layer with nearly zero-biased dimension is achieved.
申请公布号 US6057246(A) 申请公布日期 2000.05.02
申请号 US19980067927 申请日期 1998.04.28
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 LEE, I-PING;JENG, ERIK S.;HSIEH, CHYEI-JER
分类号 H01L21/027;H01L21/311;H01L21/3213;(IPC1-7):H01L21/306 主分类号 H01L21/027
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