| 摘要 |
A ferroelectric memory has a smaller circuit area and offers lower current consumption, higher reliability, and a longer working life than ever. In this ferroelectric memory, one end of a capacitor is connected, through a switching device that is provided for achieving connection to a divided plate line and is turned on and off by a word line, to the divided plate line, and the divided plate line is connected, through another switching device that is provided for achieving connection to a plate line and is turned on and off by a column line, to the plate line for controlling the writing and reading of data. The other end of the capacitor is connected, through another switching device that is turned on and off by the word line, to a bit line, and the bit line is connected, through another switching device that is turned on and off by the column line, to an input/output line for controlling the writing and reading of data.
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