发明名称 Output circuit for power IC with high breakdown voltage
摘要 An output circuit for a high-breakdown-voltage power IC is provided. The output circuit includes a level-shift circuit on constant-current type including an output terminal connected to the gate of a p-channel MOSFET with a high breakdown voltage; a totem-pole circuit including an n-channel MOSFET with a high breakdown voltage on the high potential side of the totem-pole circuit, the gate of which is connected to the drain of the MOSFET via a high resistance; an n-channel MOSFET with a high breakdown voltage on the low potential side of the totem-pole circuit, and one single power supply having a plurality of terminals, the voltages thereof are different, used for a low-voltage power supply for driving the level-shift circuit and a high-voltage power supply for driving the totem-pole circuit.
申请公布号 US6057726(A) 申请公布日期 2000.05.02
申请号 US19980054945 申请日期 1998.04.03
申请人 FUJI ELECTRIC CO., LTD. 发明人 SUMIDA, HITOSHI
分类号 H03F3/30;H03F3/345;H03K17/06;(IPC1-7):H03L5/00 主分类号 H03F3/30
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