发明名称 |
Tantalum-containing barrier layers for copper |
摘要 |
An improved barrier layer of tantalum to prevent diffusion of copper into a dielectric layer or silicon substrate is made by alternately sputter depositing thin amorphous tantalum layers and tantalum nitride layers. The resultant wholly amorphous tantalum-containing layer leads to a stronger barrier and prevents formation of a columnar structure in thick tantalum layers. The sputter depositions of tantalum and tantalum nitride can be repeated until the desired thickness of the barrier is obtained.
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申请公布号 |
US6057237(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19970841058 |
申请日期 |
1997.04.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
DING, PEIJUN;CHIANG, TONY PING-CHEN |
分类号 |
C23C14/06;H01L21/203;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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