发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a buffer layer (23) having a doped region (24), a barrier layer (26) over the buffer layer (23) and having a doped region (27), and a channel layer (25) located between the buffer layer (23) and the barrier layer (26) where the doping density of the doped region (27) in the barrier layer (26) is higher than the doping densities of the channel layer (25) and the doped region (24) in the first buffer layer (23).
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申请公布号 |
US6057566(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980069338 |
申请日期 |
1998.04.29 |
申请人 |
MOTOROLA, INC. |
发明人 |
EISENBEISER, KURT W.;WANG, YANG;HUANG, JENN-HWA;NAIR, VIJAY K. |
分类号 |
H01L29/778;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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