发明名称 |
Device for reading nonvolatile memory cells, in particular analog flash memory cells |
摘要 |
<p>The reading device (1) comprises an A/D converter (8) of n+m bits receiving an input signal (V1) correlated to the threshold voltage (VTH) of the memory cell (2), and supplying a binary output word (WT) of n+m bits. The A/D converter (8) is of a double conversion stage type (8), wherein a first A/D conversion stage (10) carries out a first analog/digital conversion of the input signal (V1), to supply at the output a first intermediate binary word (W1) of n bits, and the second A/D conversion stage (16) can be activated selectively to carry out a second analog/digital conversion of a difference signal (VD) correlated to the difference between the input signal (V1) and the value of the first intermediate binary word (W1). The second A/D conversion stage (16) generates at the output a second intermediate binary word (W2) of m bits supplied, with the first intermediate binary word (W1), to an adder (20) generating the binary output word (WT) of n+m bits. <IMAGE></p> |
申请公布号 |
EP0997912(A1) |
申请公布日期 |
2000.05.03 |
申请号 |
EP19980830626 |
申请日期 |
1998.10.20 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PASOTTI, MARCO;CANEGALLO, ROBERTO;GUAITINI, GIOVANNI;ROLANDI, PIER LUIGI |
分类号 |
G11C11/56;G11C16/26;G11C16/34;G11C27/00;(IPC1-7):G11C27/00;G11C16/06 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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