Precharge-enable self boosting word line driver for an embedded DRAM

摘要

The invention relates to word line drivers found in embedded dynamic random access memories (DRAM) of application specific integrated circuits (ASICs). The invention is a method of programming the time at which the boosted voltage interval begins, and the period during which the boosted voltage is maintained. The result is the ability to apply the boosted voltage only when needed, thus minimizing the danger to the oxide integrity. The method comprises initiating an active row cycle in response to a leading edge of a row activation signal, initiating a precharge cycle in response to a trailing edge of the row activation signal, the precharge cycle comprising a broad line boost interval initiated by the falling edge of the row activation signal and having a predetermined duration controlled by a programmable delay circuit.