发明名称 Cryogenic annealing of sputtering targets
摘要 Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.
申请公布号 US6056857(A) 申请公布日期 2000.05.02
申请号 US19970910334 申请日期 1997.08.13
申请人 PRAXAIR S.T. TECHNOLOGY, INC. 发明人 HUNT, THOMAS J.;GILMAN, PAUL S.;JOYCE, JAMES E.;LO, CHI-FUNG;DRAPER, DARRYL
分类号 C23C14/34;C23C14/56;(IPC1-7):C23C14/34 主分类号 C23C14/34
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