发明名称 |
Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
摘要 |
Pure silicon feedstock is melted and vaporized in a physical vapor transport furnace. In one embodiment the vaporized silicon 46 is reacted with a high purity carbon member 74, such as a porous carbon disc, disposed directly above the silicon. The gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal 50 axially located above the disc, resulting in the growth of monocrystalline silicon carbide 56. In another embodiment, one or more gases, which may include a carbon-containing gas, are additionally introduced at 84 into the furnace, such as into a reaction zone above the disc, to participate in the growth process.
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申请公布号 |
US6056820(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980112427 |
申请日期 |
1998.07.10 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
BALAKRISHNA, VIJAY;AUGUSTINE, GODFREY;GAIDA, WALTER E.;THOMAS, R. NOEL;HOPKINS, RICHARD H. |
分类号 |
C30B23/00;C30B25/00;(IPC1-7):C30B35/00 |
主分类号 |
C30B23/00 |
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