| 摘要 |
In a contactless nonvolatile semiconductor memory device including a semiconductor substrate and a plurality of impurity diffusion layers of a rectangular shape serving as sub bit lines on the semiconductor substrate, a plurality of grooves of a rectangular shape are formed in the semiconductor substrate between the impurity diffusion layers. Also, a first gate insulating layer is formed on the semiconductor substrate within the grooves, and a plurality of floating gate electrodes are formed on the gate insulating layer. Further, a second gate insulating layer is formed on the floating gate electrodes, and a plurality of word lines are formed on the second gate insulating layer.
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