| 摘要 |
A method for fabricating a copper, or a copper-titanium nitride-titanium, interconnect structure, using a low temperature RIE patterning procedure, has been developed. The RIE patterning procedure features the use of SiCl4 and nitrogen, as reactants, with amount of nitrogen supplied, being equal to, or greater than, the SiCl4 level. The addition of nitrogen, to the etching ambient, results in the formation of a non-cross-linked, by-product, which is easily removed during the patterning procedure, this not interfering with the creation of interconnect structure. Without the addition of nitrogen, a cross-linked, by-product, would be formed, during the low temperature RIE procedure, with the redeposited, cross-linked, by-product, interfering with the patterning of the copper interconnect structure.
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