FORMING METHOD OF MULTI METAL LAYERS IN A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming multi-metal layers of a semiconductor device is provided to prevent generation of compounds due to mutual reaction of metals by forming a protecting metal layer on a lower metal layer. CONSTITUTION: After an insulating film(23) is formed on a silicon substrate(21) where a junction portion(22) is deposited, a first contact hole is formed by patterning the insulating film(23) for the junction portion(22) to be exposed. Then, a barrier metal layer(25) and a first metal layer(26) are sequentially formed on an entire surface and a protecting metal layer(27) is formed on the first metal layer(26). After a first anti-reflective coating(28) is formed on the protecting metal layer(27), a first metal wire is formed by patterning the first anti-reflective coating(28), the protecting metal layer(27), the first metal layer(26) and the barrier metal layer(25) sequentially. A second contact hole is formed by patterning an intermetal dielectrics(29) for a predetermined portion of the first metal wire to be exposed. Then, a second metal wire is formed by sequentially patterning a second anti-reflective coating(33), a second metal layer(32) and a wetting layer(31) formed on the resultant structure.