| 摘要 |
PURPOSE: A method for manufacturing semiconductor devices is provided to protect an interface exposed on the surface when a stack structure insulating film is planarized by chemical mechanical polishing. CONSTITUTION: A method for manufacturing semiconductor devices defines an active region in which a MOS transistor will be formed on a wafer(11), by forming a trench(12) or a field oxide film by a local oxidization of silicon(LOCOS) method in a device separation region of the silicon wafer(11). A gate oxide film and polysilicon are deposited at the defined active region and are then patterned to form a gate electrode. Then, an impurity is doped into the active region of the silicon wafer using the gate electrode as a resist to form a source/drain region. By forming a spacer at the sidewall of the gate electrode, MOS transistors(13,14) are formed in each of the active regions. A boron-phosphor-silicate glass(BPSG) film(16) is formed on the silicon wafer(16). A plasma enhanced thetraethyle orthosilicate(PETEOS) film(17) is deposited as a pad film on the BPSG film(16) by means of plasma chemical vapor deposition method. A contact barrier metal film consisting of a titanium film(19) and a nitride titanium film(20) are formed.
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