发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 In a semiconductor device of the present invention, since a second semiconductor substrate is provided wherein a part of a semiconductor device in which an active device is formed is utilized as electrodes and third electrodes are formed on a surface of the second semiconductor substrate and fourth electrodes are formed on a back surface of the second semiconductor substrate to be connected to external devices, the semiconductor device can be provided wherein metal lead terminals connected to external electrodes and protection sealing mold can be omitted by employing the second semiconductor substrate as external connecting electrodes, unlike the semiconductor device in the prior art. Accordingly, outer sizes of the semiconductor device can be remarkably miniaturized, and unnecessary dead space can be eliminated when the device is packaged on a packaging substrate, whereby contributing significantly to miniaturization of the packaging substrate.
申请公布号 KR100254661(B1) 申请公布日期 2000.05.01
申请号 KR19970027149 申请日期 1997.06.25
申请人 SANYO ELECTRIC CO.,LTD. 发明人 MAMOROO, AHNDO
分类号 H01L23/31;H01L23/48;H01L23/482 主分类号 H01L23/31
代理机构 代理人
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