FABRICATION METHOD OF N TYPE SEMICONDUCTOR

摘要

PURPOSE: A method for manufacturing N-type semiconductor diamond is provided to be capable of manufacturing an N-type semiconductor diamond by etching the surface of diamond after Li compound and B compound are simultaneously doped using N-type impurity by means of chemical vapor deposition method. CONSTITUTION: A method for manufacturing N-type semiconductor diamond dopes Li compound being an n-type impurity and boron(B) compound being a p-type impurity on a diamond film at the same time when the diamond film is deposited using chemical vapor deposition method. B compound on the surface layer is removed by etching. Etching of the surface layer employs a hydrogen gas.