| 摘要 |
In a semiconductor device and a method of manufacturing the same according to the present invention, after As and C are introduced to a semiconductor substrate, a semiconductor layer is formed on the semiconductor substrate. When first and second semiconductor layers are to be sequentially formed on a semiconductor substrate, an impurity concentration of As or Sb serving as an impurity of the first semiconductor layer is 10 times or more an impurity concentration of the second semiconductor layer, and the second semiconductor layer has a thickness of 4 to 10 mu m. |
