| 摘要 |
PURPOSE: A power semiconductor device is provided to improve a short circuit current characteristic and a latch-up prevention characteristic. CONSTITUTION: A power semiconductor device includes the first conductive type semiconductor substrate. The first conductive type well region(108) is formed to extend in one direction on the second conductive type semiconductor layer formed on the first conductive type semiconductor substrate. A conductive film(120) extends in the same direction to the first conductive type well region(108) and is electrically connected to the first conductive type well region(108). The second conductive type source junction region has the first and second parts(112a,112b,124a,124b) and the third parts(112c,124c). The first and second parts(112a,112b,124a,124b) are formed in its extension direction at both sides of the first conductive type well region(108). The third parts(112c,124c) are formed in a direction orthogonal to the extension direction and electrically connect the first and second parts(112a,112b,124a,124b). The second conductive type source junction region is electrically isolated from the second conductive type source junction region adjacent to it. |
