| 摘要 |
PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to reduce pressure applied to a silicon substrate by forming an interlayer dielectric having higher tensile stress at upper portion than at lower portion. CONSTITUTION: After an insulating film(2) is formed on a silicon substrate(1), a first metal layer pattern(3A) is formed on the insulating film(2). Then, a first intermetal dielectric(4A) is formed on an entire surface. After a second metal layer pattern(3B) is formed on the first intermetal dielectrics(4A), a second intermetal dielectrics(4B) is formed on an entire surface. Then, a third metal layer pattern(3C) is formed on the second intermetal dielectrics(4B) and a third intermetal dielectrics(4C) is formed on an entire surface. After a fourth metal layer pattern(3D) is formed on the third intermetal dielectrics(4C), a fourth intermetal dielectrics(4D) is formed on an entire surface. In this structure, the intermetal dielectrics at upper portion has higher tensile stress than that at lower portion.
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