SPLIT GATE FLASH CELL ARRAY AND PROCESS FOR FABRICATING THE SAME

摘要

PURPOSE: A split gate flash cell array and method for manufacturing the same are provided to be capable of improving an electrical characteristic and reliability of cells. CONSTITUTION: A split gate flash cell array includes a field oxide film formed on a semiconductor substrate. A source line(2) and a drain line(3) are formed by ion implantation process using a cell source/a drain mask. A tunnel oxide film is formed by oxidization process and a floating gate(5) is then formed. A floating gate(5) is formed by etching process using a mask for floating gate. A dielectric film, a control gate(7) and an insulating film are sequentially formed on the entire structure including the floating gate(5). A photoresist pattern is formed on the insulating film by lithography process using a mask for control gate. A control gate(7) is formed by etching process using the photoresist pattern as an etch mask. The control gate(7) is formed in a plate shape on all the portions except for an open region(70) of the control gate. A cell spacer is formed at the etch sidewall of the open region(70). A select gate oxide film is formed on the semiconductor substrate exposed in the open region(70). A polysilicon layer(11) for select gate is formed on the entire structure, The select gate is formed by patterning process.