| 摘要 |
PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to prevent a leakage current, respectively control the operation of cells and implement a memory cell array of 1T/1C structure. CONSTITUTION: A method for manufacturing semiconductor memory devices prepares a silicon-on insulator(SOI) substrate(100) including a semiconductor substrate(100a), a semiconductor device layer(100c) and the first insulating layer(100b) between the semiconductor substrate and the semiconductor device layer. The second insulating layer is formed on the device layer. The second insulating film is etched to expose the surface of the device layer, thus forming an emitter contact hole and a collector contact hole. N type or p type impurity ions are injected into the emitter contact hole and the collector contact hole to form an emitter region(110a) and a collector region(110b), respectively, within the device layer. The device layer between the emitter region and the collector region functions as a base region(109a). An emitter electrode and a collector electrode are formed so that they can be electrically connected to the emitter region and the collector region via the emitter contact hole and the collector contact hole. The third insulating layer(114a) is formed on the second insulating layer including the emitter electrode and the collector electrode. The second and the third insulating layers are etched so that base region can be exposed, thus forming a base contact hole. The base contact hole is filled with a conductive film to form a contact plug. A ferroelectric capacitor(122a) is formed on the third insulating film(114a) so that it can be electrically connected to the contact plug.
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