| 摘要 |
PURPOSE: A manufacturing method of surface emitting laser with shallow junction is provided to reduce serial resistance and to increase oscillation efficiency of the laser. CONSTITUTION: A lower mirror layer(2), an active layer(3), a current injecting layer, and an upper mirror layer are grown on a semiconductor substrate(1). A nonreflective layer(6) is deposited on the backside of substrate(1), and etched selectively to make a lower n-type electrode(7). After forming a photoresist pattern on the substrate(1), the selected part of upper mirror layer is etched to expose the current injecting layer, and a laser pole(9) is built. Boron ions are injected into an injection region(10), and the photoresist pattern is removed. A p-type electrode pattern(11) is formed by E-beam deposition of Pd/Mg or MN/Sb/Pd on the current injecting layer. Au is doped on the upper mirror layer, and an upper n-type electrode(12) is produced using a lift-off method. To isolate some part of the lower mirror layer(2), the current injecting layer and the active layer is dry etched.
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