发明名称 Semiconductor position sensor
摘要 A plurality of resistive regions constituting a root conductive layer gradually increase in width from one end to the other end and have substantially the same resistivity. If, therefore, this semiconductor position sensitive detector is placed such that charges generated in accordance with incident light from an object at a long distance flow into narrow resistive regions, since the narrow resistive regions have high resistances, the output currents from the two ends of the root conductive layer greatly change to improve the position detection precision even in a case wherein the incident light position only slightly moves on the light-receiving surface as the distance to the object changes. <IMAGE>
申请公布号 AU9460598(A) 申请公布日期 2000.05.01
申请号 AU19980094605 申请日期 1998.10.13
申请人 HAMAMATSU PHOTONICS K.K. 发明人 TATSUO TAKESHITA;MASAYUKI SAKAKIBARA
分类号 G01C3/08;G01D5/26;G01S3/781;G01S3/783;H01L31/02 主分类号 G01C3/08
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