METHOD FOR ETCHING IR ELECTRODE

摘要

PURPOSE: A method for etching an iridium layer is provided to form a fine pattern on an iridium layer by using a titanium layer or a titanium nitride layer as an etching mask. CONSTITUTION: An interlayer dielectric(101) is deposited on a semiconductor substrate(100). A contact hole for exposing the semiconductor substrate(100) is formed on the interlayer dielectric(101). A conductive plug(105) is formed to fill the contact hole. An iridium layer(109) is deposited to cover the conductive plug(105). One layer selected from a titanium layer and a titanium nitride layer is formed on the iridium layer. The selected layer is patterned. The iridium layer(109) is etched by using the patterned layer as an etching mask and an etching gas with a high etching selection ratio.