| 摘要 |
PURPOSE: A contact hole of a semiconductor and a forming method thereof are provided to reduce contact resistance between contact plug film and semiconductor substrate at bottom plane of a contact hole. CONSTITUTION: Gate electrode layers(12,14) spaced apart from each other are formed on a semiconductor substrate(10). A high temperature oxide film(16), a first silicon nitride film(18), a BPSG(borophopho silicate glass)(20), conducting patterns(22,24), a PE oxide film(26) and a second silicon nitride film(28) are sequentially formed on the resultant structure. A contact hole is formed by etching the insulating films(28,26,20,18,16) so that the semiconductor substrate(10) between the gate electrode layers(12,14) can be exposed. In this case, the size of the contact hole is relatively larger at its bottom than at its upper portion and at its intermediate portion. A third silicon nitride film(28) is formed at sidewalls of the contact hole.
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