| 摘要 |
A method is provided for analyzing an impurity on a semiconductor substrate (12). In this method, those to-be-measured areas on a surface of a semiconductor substrate are exposed with an ultraviolet radiation (22) to provide corresponding oxide films (24). By doing so, an impurity is trapped in the oxide film at each area of the semiconductor substrate. The surface of the semiconductor substrate is cleaned with an acid solution to remove an impurity on other than the areas on the surface of the semiconductor substrate. The surface of the semiconductor substrate is exposed with a hydrofluoric acid vapor (28) to dissolve the oxide films (24) into very fine droplets (30) containing an impurity (26a). These droplets are moved on the surface of the semiconductor substrate to collect these droplets into a drop (32) on the surface of the semiconductor substrate. The impurity in the drop is measured by a known chemical spectrometer. <IMAGE> <IMAGE> |
