| 摘要 |
PURPOSE: A wire interconnection structure and a method for manufacturing the same are provided to simplify the process of interconnecting a plurality of metal layers overlapped with an insulating film interleaved therebetween. CONSTITUTION: A method for manufacturing a wire interconnection structure deposits a metal including aluminum on an insulating substrate(111). The metal is patterned to form a gate wire(115). Insulating materials such as oxide silicon or nitride silicon are deposited on the entire surface of the substrate in which the gate wire(115) is formed to form a gate insulating film(119). Chromium or chromium alloy, etc. are deposited on the gate insulating film(119) and are then patterned to form a source wire(135). A portion of the source wire(135) overlapped with the gate wire(115) is removed to form a contact hole. With a portion of the gate wire(115) and the side of the source wire(115) exposed via the contact hole, indium-tin-oxide is deposited and is then patterned to form an interconnection terminal(153). |
