REPAIR CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF THE SAME

摘要

PURPOSE: A circuit and a method for repairing a semiconductor memory device are provided to perform a testing operation for a failed chip and a repairing operation for a cell judged as being failed according to the testing operation in-situ by performing a repair by using an electrical switching characteristic of a dielectric capacitor instead of a fuse cutting method and, also, simply a process and prevent the characteristic from being degraded by moisture permeation. CONSTITUTION: The repairing circuit generates a row disabling signal for repairing a semiconductor memory cell with a redundancy cell to an output node and includes an inputting portion, a precharging portion(10), a signal generating portion(20), a probing pad(40) and a switching portion(30). The inputting portion is connected to an address line. An address signal is inputted to the inputting portion from the outside. The precharging portion precharges the output node. The signal generating portion receives an address signal from the inputting portion and generates the row disabling signal from the output node when a repairing mode is performed. The probing pad is to apply a predetermined voltage when the repairing mode is performed. The switching portion is connected between the probing pad and the inputting portion and becomes breakdown when the repairing mode is performed, thereby cutting that an address signal from the inputting portion to the signal generating portion.