FABRICATION OF SILICON NANO-STRUCTURES USING SILICON NITRIDE

摘要

PURPOSE: A forming method of silicon nano-structure with using a silicon nitride layer is provided to reduce manufacturing cost and time, and to make a silicon nano-structure with very high purity. CONSTITUTION: A nitrogen ion is injected into a silicon substrate(1). Annealing the silicon substrate(1), a single level of silicon nitride layer(2) is formed. The size and the surface density of silicon nitride layer(2) are controllable depending on the amount of nitride ion and surface temperature. The silicon nitride layer is used as a mask in etching process. A nano pillar(3) is made by etching the substrate(1) selectively. After removing the silicon nitride layer(2) on the silicon nano pilar(3), and annealing the substrate(1), a silicon nano-structure is complete.