| 摘要 |
PURPOSE: A method for forming a charge storage electrode of a semiconductor device is provided to obtain the capacity enough for a semiconductor device by increasing a valid area of a charge storage electrode. CONSTITUTION: A transistor including a dopant ion implantation region(4) is formed at both sides of a gate electrode(3) of a silicon substrate(1). An interlayer dielectric(6B) is formed on an upper portion of the whole structure. The first oxide layer is formed on the interlayer dielectric(6B). A contact hole is formed on one region of the dopant ion implantation region(4). The first conductive layer(9) is deposited on the upper portion of the whole structure. The second oxide layer is deposited on the first conductive layer(9). The third oxide layer and a nitride layer are laminated on the second oxide layer. A charge storage electrode region is patterned by etching the nitride layer, the third oxide layer, the second oxide layer, and the first conductive layer(9). The second conductive layer(13) is deposited on the upper portion of the whole structure. A charge storage electrode sidewall is formed by etching the second conductive layer(13). The remaining nitride layer, the third oxide layer, and the second oxide layer are removed from the second conductive layer(13). An under-cut portion of the charge storage electrode is formed by etching the exposed the first oxide layer. A hemispherical polysilicon(14) is deposited on the upper portion of the whole structure. A charge storage electrode is formed by performing a blanket etching process.
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