FORMING A CONTACT HOLE IN A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to form a width of a contact hole less than a line width of a minimum pattern by using a Ta2O5 oxide layer as a contact hole etching barrier. CONSTITUTION: A field oxide layer(2) is formed on a silicon substrate(1). A gate oxide layer(3), a polysilicon layer, the first TEOS oxide layer(5), and the first Ta2O5 oxide layer are deposited on an upper portion of the whole structure. The first photoresist is applied on the first Ta2O5 oxide layer. The first photoresist is patterned. The first Ta2O5 oxide layer and the first TEOS layer(5) are etched by using the patterned photoresist layer. A multitude of gate electrode(8) is formed by etching the polysilicon layer. A dopant ion implantation region is formed at both sides of the gate electrode(8). The second TEOS oxide layer is deposited on the upper portion of the whole structure. A spacer oxide layer(10A) is formed at a sidewall of the gate electrode(8) by etching the second TEOS oxide layer. A dopant ion implantation region(9A) for source and drain electrode is formed by performing the second dopant implantation process. The second Ta2O5 oxide layer is deposited on the upper portion of the whole structure. The third Ta2O5 oxide layer(12) is formed around the gate electrode(8) by etching the second Ta2O5 oxide layer. A BPSG layer is deposited on the upper portion of the whole structure. The second photoresist is applied on the BPSG layer. The second photoresist is patterned by using a mask. The BPSG layer is etched by using the patterned the second photoresist. A contact hole(20) is formed by etching the BPSG layer. The patterned the second photoresist is stripped.